Precision elemental analysis by EELS analysis at a nano-meter scale is a desirable goal for industrial application, as well as basic scientific research on advanced material analysis. However, sample thickness variation leads to a systematic error in element quantification due to electron plural scattering, which prevents it to be a useful quantitative analytic method. In this paper, we compared methods for thickness effect correction: Fourier-log deconvolution, Jump ratio, and Si K-edge by quantifying the N/Si ratio versus different thickness on a standard Si₃N₄ crystal sample. The results indicated that Jump ratio method exceeded other two methods owing to its higher accuracy, short data acquisition time as well as minimum requirement for spectroscopy instrument. The jump ratio method was applied to calculate N/Si ratio in storage nitride layer of 3D NAND trench wafer and blanket wafer, both illustrated that the jump ratio method successfully corrected the thickness effect on EELS composition quantification and largely reduced the relative error compared with the non-corrected result.

通过纳米尺度的 EELS 分析进行精密元素分析是工业应用以及先进材料分析的基础科学研究的理想目标。然而，由于电子复数散射，样品厚度变化会导致元素定量的系统误差，这使其无法成为一种有用的定量分析方法。在本文中，我们通过量化标准 Si ₃ N _{4上的 N/Si 比与不同厚度，比较了厚度效应校正的方法：傅里叶对数反卷积、跳跃比和 Si K 边缘}晶体样品。结果表明，跳跃比法具有精度高、数据采集时间短、对光谱仪器要求低等优点，优于其他两种方法。采用跳跃比法计算3D NAND沟槽晶片和毯式晶片的存储氮化物层中的N/Si比，均说明跳跃比法成功地校正了厚度对EELS成分量化的影响，并且相对误差大大降低。未修正的结果。