Quaternary Ge-Sb-Se-Te chalcogenide thin films were fabricated by rf magnetron sputtering from Ge₁₉Sb₁₇Se_64−xTe_x (x = 5, 10, 15, 20) sputtering targets in order to select appropriate compositions for infrared sensor and optical nonlinear applications. An influence of chemical composition and deposition parameters on the optical properties, structure and wettability was thus studied. The amorphous thin films seem to be constituted by selenide entities that can include tellurium atoms in variable proportion such as [GeSe_4−xTe_x] and [SbSe_3−xTe_x] (x = 0, 1, 2) and Ge(Sb)-Ge(Sb) bonds according to Raman spectroscopy. Contact angle measurements of the thin films showed values of 68–71° for water and their surface energies in the range of ∼36–39 mJ·m⁻² seem suitable for surface functionalization required for photonic sensor development. Furthermore, the maximum nonlinearity at the telecom wavelength with respect to the highest figure of merit value was found for the thin film with composition Ge₁₉Sb₁₇Se₅₆Te₈ having nonlinear refractive index of 28 × 10⁻¹⁸ m²·W⁻¹. Due to their low optical bandgap energies, they may find their full interest for nonlinear optics in the mid-infrared range. Wide IR transparency in combination with high (non)linear refractive indices make these materials attractive in the field of mid-IR sensing and optical nonlinear devices.

_{通过射频磁控溅射从 Ge 19} Sb ₁₇ Se _{64− x} Te _x (x = 5, 10, 15, 20) 溅射靶材制备四元 Ge-Sb-Se-Te 硫属化物薄膜，以便为红外传感器选择合适的成分和光学非线性应用。因此研究了化学成分和沉积参数对光学性质、结构和润湿性的影响。非晶薄膜似乎是由硒化物实体构成的，这些硒化物实体可以包含可变比例的碲原子，例如 [GeSe _{4− x} Te _x ] 和 [SbSe _{3− x} Te _x ] ( x = 0, 1, 2) 和 Ge(Sb)-Ge(Sb) 键，根据拉曼光谱。薄膜的接触角测量结果表明水的值为 68-71°，它们的表面能在 ∼36-39 mJ·m ^-2范围内似乎适合光子传感器开发所需的表面功能化。此外，对于具有非线性折射率为28 × 10 ^-18  m ² ·W ^{-1的成分Ge} ₁₉ Sb ₁₇ Se ₅₆ Te ₈的薄膜，在电信波长处发现了相对于最高品质因数的最大非线性。. 由于它们的光学带隙能量低，他们可能会对中红外范围内的非线性光学产生全部兴趣。宽红外透明度与高（非线性）线性折射率相结合，使这些材料在中红外传感和光学非线性器件领域具有吸引力。