Solution-processed oxide semiconductors have been considered as a potential alternative to vacuum-based ones in printable electronics. However, despite spin-coated InZnO (IZO) thin-film transistors (TFTs) have shown a relatively high mobility, the lack of carrier suppressor and the high sensitivity to oxygen and water molecules in ambient air make them potentially suffer issues of poor stability. In this work, Al is used as the third cation doping element to study the effects on the electrical, optoelectronic, and physical properties of IZO TFTs. A hydrophobic self-assembled monolayer called octadecyltrimethoxysilane is introduced as the surface passivation layer, aiming to reduce the effects from air and understand the importance of top surface conditions in solution-processed, ultra-thin oxide TFTs. Owing to the reduced trap states within the film and at the top surface enabled by the doping and passivation, the optimized TFTs show an increased current on/off ratio, a reduced drain current hysteresis, and a significantly enhanced bias stress stability, compared with the untreated ones. By combining with high-capacitance AlO _x , TFTs with a low operating voltage of 1.5 V, a current on/off ratio of > 10 ⁴ and a mobility of 4.6 cm²/(V·s) are demonstrated, suggesting the promising features for future low-cost, low-power electronics.

中文翻译：

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Al 掺杂和表面钝化提高溶液处理 InZnO 薄膜晶体管的性能

溶液处理的氧化物半导体被认为是可印刷电子产品中基于真空的氧化物半导体的潜在替代品。然而，尽管旋涂 InZnO (IZO) 薄膜晶体管 (TFT) 显示出相对较高的迁移率，但缺乏载流子抑制器以及对环境空气中的氧气和水分子的高敏感性使其可能存在稳定性差的问题。在这项工作中，Al 被用作第三种阳离子掺杂元素，以研究对 IZO TFT 的电学、光电和物理性质的影响。引入称为十八烷基三甲氧基硅烷的疏水性自组装单层作为表面钝化层，旨在减少空气的影响并了解溶液处理的超薄氧化物 TFT 中顶部表面条件的重要性。由于掺杂和钝化使薄膜内和顶面的陷阱态减少，优化后的 TFT 显示出增加的电流开/关比，减少的漏极电流滞后和显着增强的偏置应力稳定性，与未经处理的。通过结合高电容氧化铝 _X ^{, TFT 具有 1.5 V 的低工作电压、> 10 4}的电流开/关比和 4.6 cm ² /(V·s)的迁移率，表明未来低成本、低功耗的有前途的特性电子产品。