A proposed inductive-phase-compensation ultra wideband CMOS digital T-type attenuator design based on an analysis of minimising phase errors is presented in this letter. In a standard CMOS technology, the proposed attenuator is analytically demonstrated to have low phase errors due to the inductive-phase-compensation network. A design equation is inferred and a wide-band 4dB attenuation bit digital attenuator with low phase errors is designed as a test vehicle for the proposed approach.

中文翻译：

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具有低相位误差的超宽带 CMOS 数字 T 型衰减器

本文提出了一种基于最小化相位误差分析的电感相位补偿超宽带 CMOS 数字 T 型衰减器设计。在标准 CMOS 技术中，由于电感相位补偿网络，所提出的衰减器经分析证明具有低相位误差。推导了一个设计方程，并设计了一个具有低相位误差的宽带 4dB 衰减位数字衰减器作为所提出方法的测试工具。