Fabricating flexible electronics on plastic is often limited by the poor dimensional stability of polymer substrates. To mitigate, glass carriers are used during fabrication, but removing the plastic substrate from a carrier without damaging the electronics remains challenging. Here we utilize a large-area, high-throughput photonic lift-off (PLO) process to rapidly separate polymer films from rigid carriers. PLO uses a 150 µs pulse of broadband light from flashlamps to lift-off functional thin films from glass carrier substrates coated with a light absorber layer (LAL). Modeling indicates that the polymer/LAL interface reaches above 800 °C during PLO, but the top surface of the PI remains below 120 °C. An array of indium zinc oxide (IZO) thin-film transistors (TFTs) was fabricated on a polyimide substrate and photonically lifted off from the glass carrier. The TFT mobility was unchanged by PLO. The flexible TFTs were mechanically robust, with no reduction in mobility while flexed.

在塑料上制造柔性电子产品通常受到聚合物基板尺寸稳定性差的限制。为了减轻影响，在制造过程中使用了玻璃载体，但在不损坏电子设备的情况下从载体上移除塑料基板仍然具有挑战性。在这里，我们利用大面积、高通量光子剥离 (PLO) 工艺将聚合物薄膜与刚性载体快速分离。PLO 使用来自闪光灯的 150 µs 宽带光脉冲从涂有光吸收层 (LAL) 的玻璃载体基板上剥离功能性薄膜。建模表明聚合物/LAL 界面在 PLO 期间达到 800 °C 以上，但 PI 的顶面保持在 120 °C 以下。在聚酰亚胺基板上制造铟锌氧化物 (IZO) 薄膜晶体管 (TFT) 阵列，并以光子方式从玻璃载体上剥离。PLO 未改变 TFT 迁移率。柔性 TFT 机械坚固，弯曲时移动性没有降低。