The coming era of big data revives the Processing-in-memory (PIM) architecture to relieve the memory wall problem that embarrasses the modern computing system. However, most existing PIM designs just put computing units closer to memory, rather than a complete integration of them due to their incompatibility in CMOS manufacturing. Fortunately, the emerging Resistive-RAM (ReRAM) offers new hope to this dilemma owing to its inherent memory and computing capability using the same device. In this article, we propose a ReRAM memory structure with efficient PIM capability of both logic and add operations. It first leverages non-linearity to suppress sneak current and thus sustains high memory density. Using a differential bit cell, it also enables efficient processing of arbitrary logic functions using the same memory cells with non-destructive operations. Then, a novel PIM adder is proposed, which customizes a sneak current path as the carry-chain for fast carry propagation and improves adder performance significantly. In the experiment, the proposed PIM demonstrates higher efficiency in both computing area and performance for logic and addition, which greatly increases the ReRAM PIM applicability for future computable architectures.

中文翻译：

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一种用于高效逻辑和加法运算的新型基于电阻存储器的内存中进程架构

即将到来的时代大数据恢复内存处理 (PIM) 架构以减轻记忆墙困扰现代计算系统的问题。然而，大多数现有的 PIM 设计只是将计算单元更靠近内存，而不是完全集成它们，因为它们在 CMOS 制造中不兼容。幸运的是，新兴的电阻式 RAM (ReRAM) 凭借其固有的内存和使用同一设备的计算能力，为这一困境提供了新的希望。在本文中，我们提出了一种具有高效 PIM 能力的 ReRAM 内存结构，同时具有逻辑和加法运算的能力。它首先利用非线性来抑制潜流从而维持高存储密度。使用差分位单元，它还可以使用具有非破坏性操作的相同存储单元高效处理任意逻辑功能。然后，提出了一种新颖的 PIM 加法器，它定制了一条潜行电流路径作为进位链以实现快速进位传播，并显着提高了加法器的性能。在实验中，所提出的 PIM 在计算区域和逻辑和加法性能方面都表现出更高的效率，这极大地增加了 ReRAM PIM 在未来可计算架构中的适用性。