Class E power amplifiers are widely used in high-frequency applications due to their simplicity and use of only one ground-referenced switch. However, Class E power amplifiers are usually tuned to operate at a fixed frequency due to their resonant nature. Extending the bandwidth of these switch-mode power amplifiers is beneficial in many applications, such as plasma generators and wireless power transfer systems. In this paper, we present a 1 kW wideband Class E power amplifier using Silicon Carbide (SiC) MOSFETs that achieves 93% efficiency at 13.56 MHz with a bandwidth of $\pm$ 1 MHz. We incorporate a reactance compensation network in the output loading stage to achieve wideband operation; design a custom gate drive circuit to reduce the gate power loss and improve thermal performance compared to using a gate driver IC. The total gate power of one SiC MOSFET is measured to be 1.55 W at 13.56 MHz.

中文翻译：

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1 kW MHz 宽带 E 类功率放大器

E 类功率放大器因其简单性和仅使用一个以地为参考的开关而广泛用于高频应用。然而，由于 E 类功率放大器的谐振特性，它们通常被调谐为以固定频率工作。扩展这些开关模式功率放大器的带宽在许多应用中都是有益的，例如等离子发生器和无线电力传输系统。在本文中，我们展示了一款使用碳化硅 (SiC) MOSFET 的 1 kW 宽带 E 类功率放大器，该放大器在 13.56 MHz 下可实现 93% 的效率，带宽为$\pm$ 1兆赫。我们在输出负载阶段加入了一个电抗补偿网络，以实现宽带操作；与使用栅极驱动器 IC 相比，设计定制栅极驱动电路以降低栅极功率损耗并提高热性能。一个 SiC MOSFET 的总栅极功率在 13.56 MHz 时测得为 1.55 W。