Phase change memory (PCM) attracts wide attention for the memory-centric computing and neuromorphic computing. For circuit and system designs, PCM compact models are mandatory and their status are reviewed in this work. Macro models and physics-based models have been proposed in different stages of the PCM technology developments. Compact modeling of PCM is indeed more complex than the transistor modeling due to their multi-physics nature including electrical, thermal and phase transition dynamics as well as their interactions. Realizations of the PCM operations including threshold switching, set and reset programming in these models are diverse, which also differs from the perspective of circuit simulations. For the purpose of efficient and reliable designs of the PCM technology, open issues and challenges of the compact modeling are also discussed.

中文翻译：

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相变存储器紧凑建模综述

相变存储器（PCM）因以存储器为中心的计算和神经形态计算而受到广泛关注。对于电路和系统设计，PCM 紧凑模型是强制性的，并且在这项工作中审查了它们的状态。在 PCM 技术发展的不同阶段，已经提出了宏观模型和基于物理的模型。PCM 的紧凑建模确实比晶体管建模更复杂，因为它们具有多物理特性，包括电、热和相变动力学及其相互作用。这些模型中包括阈值切换、置位和复位编程在内的PCM操作的实现是多种多样的，这也不同于电路仿真的角度。为了高效可靠地设计 PCM 技术，