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Structural and optical properties of AlN sputtering deposited on sapphire substrates with various orientations
Journal of Semiconductors Pub Date : 2022-02-01 , DOI: 10.1088/1674-4926/43/2/022801 Xianchun Peng 1, 2 , Jie Sun 1 , Huan Liu 3, 4 , Liang Li 1 , Qikun Wang 4 , Liang Wu 4 , Wei Guo 1 , Fanping Meng 1 , Li Chen 1 , Feng Huang 1 , Jichun Ye 1
Journal of Semiconductors Pub Date : 2022-02-01 , DOI: 10.1088/1674-4926/43/2/022801 Xianchun Peng 1, 2 , Jie Sun 1 , Huan Liu 3, 4 , Liang Li 1 , Qikun Wang 4 , Liang Wu 4 , Wei Guo 1 , Fanping Meng 1 , Li Chen 1 , Feng Huang 1 , Jichun Ye 1
Affiliation
AlN thin films were deposited on c -, a - and r -plane sapphire substrates by the magnetron sputtering technique. The influence of high-temperature thermal annealing (HTTA) on the structural, optical properties as well as surface stoichiometry were comprehensively investigated. The significant narrowing of the (0002) diffraction peak to as low as 68 arcsec of AlN after HTTA implies a reduction of tilt component inside the AlN thin films, and consequently much-reduced dislocation densities. This is also supported by the appearance of E
2(high) Raman peak and better Al–N stoichiometry after HTTA. Furthermore, the increased absorption edge after HTTA suggests a reduction of point defects acting as the absorption centers. It is concluded that HTTA is a universal post-treatment technique in improving the crystalline quality of sputtered AlN regardless of sapphire orientation.
中文翻译:
溅射沉积在不同取向的蓝宝石衬底上的 AlN 的结构和光学特性
AlN薄膜沉积在C -,A - 和r -采用磁控溅射技术平面蓝宝石衬底。综合研究了高温热退火 (HTTA) 对结构、光学性质以及表面化学计量的影响。在 HTTA 之后,AlN 的 (0002) 衍射峰显着变窄至低至 68 arcsec,这意味着 AlN 薄膜内部的倾斜分量减少,因此位错密度大大降低。这也得到了外观的支持乙
2(高)拉曼峰和 HTTA 后更好的 Al-N 化学计量。此外,HTTA 后增加的吸收边缘表明作为吸收中心的点缺陷减少。得出的结论是,无论蓝宝石取向如何,HTTA 都是一种提高溅射 AlN 结晶质量的通用后处理技术。
更新日期:2022-02-01
中文翻译:
溅射沉积在不同取向的蓝宝石衬底上的 AlN 的结构和光学特性
AlN薄膜沉积在