Diamond, as an ultra-wide bandgap semiconductor, has become a promising candidate for next-generation microelectronics and optoelectronics due to its numerous advantages over conventional semiconductors, including ultrahigh carrier mobility and thermal conductivity, low thermal expansion coefficient, and ultra-high breakdown voltage, etc. Despite these extraordinary properties, diamond also faces various challenges before being practically used in the semiconductor industry. This review begins with a brief summary of previous efforts to model and construct diamond-based high-voltage switching diodes, high-power/high-frequency field-effect transistors, MEMS/NEMS, and devices operating at high temperatures. Following that, we will discuss recent developments to address scalable diamond device applications, emphasizing the synthesis of large-area, high-quality CVD diamond films and difficulties in diamond doping. Lastly, we show potential solutions to modulate diamond’s electronic properties by the “elastic strain engineering” strategy, which sheds light on the future development of diamond-based electronics, photonics and quantum systems.

中文翻译：

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金刚石半导体与弹性应变工程

金刚石作为一种超宽带隙半导体，由于与传统半导体相比具有超高载流子迁移率和热导率、低热膨胀系数、超高击穿电压等众多优势，已成为下一代微电子和光电子领域的有希望的候选者等。尽管具有这些非凡的特性，金刚石在实际应用于半导体行业之前也面临着各种挑战。这篇综述首先简要总结了之前在模拟和构建基于金刚石的高压开关二极管、高功率/高频场效应晶体管、MEMS/NEMS 以及在高温下运行的设备方面所做的努力。之后，我们将讨论解决可扩展金刚石设备应用的最新进展，强调大面积、高质量的 CVD 金刚石薄膜和金刚石掺杂的困难。最后，我们展示了通过“弹性应变工程”策略调节金刚石电子特性的潜在解决方案，这揭示了基于金刚石的电子学、光子学和量子系统的未来发展。