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Avalanche photodiodes on silicon photonics
Journal of Semiconductors Pub Date : 2022-02-01 , DOI: 10.1088/1674-4926/43/2/021301
Yuan Yuan 1 , Bassem Tossoun 1 , Zhihong Huang 1 , Xiaoge Zeng 1 , Geza Kurczveil 1 , Marco Fiorentino 1 , Di Liang 1 , Raymond G. Beausoleil 1
Affiliation  

Silicon photonics technology has drawn significant interest due to its potential for compact and high-performance photonic integrated circuits. The Ge- or III–V material-based avalanche photodiodes integrated on silicon photonics provide ideal high sensitivity optical receivers for telecommunication wavelengths. Herein, the last advances of monolithic and heterogeneous avalanche photodiodes on silicon are reviewed, including different device structures and semiconductor systems.

中文翻译:

硅光子学上的雪崩光电二极管

硅光子技术因其在紧凑型和高性能光子集成电路方面的潜力而引起了人们的极大兴趣。集成在硅光子学上的基于 Ge 或 III-V 材料的雪崩光电二极管为电信波长提供了理想的高灵敏度光接收器。在此,回顾了硅上单片和异质雪崩光电二极管的最新进展,包括不同的器件结构和半导体系统。
更新日期:2022-02-01
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