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Stacking and Twisting of Layered Materials Enabled by Screw Dislocations and Non-Euclidean Surfaces
Accounts of Materials Research ( IF 14.6 ) Pub Date : 2022-02-16 , DOI: 10.1021/accountsmr.1c00245
Yuzhou Zhao 1 , Song Jin 1
Affiliation  

The rise of van der Waals layered materials such as graphene, hexagonal boron nitride, and transition-metal dichalcogenides opens up enormous opportunities for exploring novel quantum phenomena at the two-dimensional (2D) atomic limit. The physical properties of van der Waals materials are often affected by the symmetry of the crystal lattices. For example, breaking the inversion symmetry can lead to a variety of phenomena, such as second-harmonic generation, valley polarization, and ferroelectricity. The symmetry and symmetry breaking of layered materials are determined by the atomic arrangements within the layer and the layer stackings. The screw-dislocation-driven growth mechanism is general to 2D materials and can provide effective kinetic pathways to influence the layer stacking and generate diverse and complex layer stackings with different symmetry.

中文翻译:

螺旋位错和非欧几里得表面使层状材料的堆叠和扭曲

石墨烯、六方氮化硼和过渡金属二硫属化物等范德华层状材料的兴起为探索二维 (2D) 原子极限的新型量子现象开辟了巨大机遇。范德华材料的物理性质经常受到晶格对称性的影响。例如,打破反演对称会导致多种现象,如二次谐波的产生、谷极化和铁电性。层状材料的对称性和对称性破缺由层内的原子排列和层堆叠决定。
更新日期:2022-02-16
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