Here we discuss the synthesis of copper (II) oxide (CuO) and manganese (Mn)-doped CuO thin films varying with 0 to 8 at% Mn using the spray pyrolysis technique. As-deposited film surfaces comprised of agglomerated spherical nanoparticles and a semi-spongy porous structure for 4 at% Mn doping. Energy dispersive analysis of X-rays confirmed the chemical composition of the films. X-ray diffraction spectra showed a polycrystalline monoclinic structure with the predominance of the ( 11) peak. Optical band gap energy for direct and indirect transitions was estimated in the ranges from 2.67–2.90 eV and 0.11–1.73 eV, respectively. Refractive index and static dielectric constants were computed from the optical spectra. Electrical resistivity of CuO and Mn-doped CuO (Mn:CuO) thin films was found in the range from 10.5 to 28.6 Ω·cm. The tiniest electron effective mass was calculated for 4 at% Mn:CuO thin films. P to n-type transition was observed for 4 at% Mn doping in CuO films. Carrier concentration and mobility were found in the orders of 10¹⁷ cm^–3 and 10^–1 cm²/(V·s), respectively. The Hall coefficient was found to be between 9.9 and 29.8 cm³/C. The above results suggest the suitability of Mn:CuO thin films in optoelectronic applications.

中文翻译：

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Mn 掺杂 CuO 纳米结构薄膜中的带隙调谐和 p 型到 n 型跃迁

在这里，我们讨论了使用喷雾热解技术合成 0 至 8 at% Mn 的氧化铜 (II) (CuO) 和掺杂锰 (Mn) 的 CuO 薄膜。沉积薄膜表面由团聚的球形纳米颗粒和用于 4 at% Mn 掺杂的半海绵状多孔结构组成。X 射线的能量色散分析证实了薄膜的化学成分。X 射线衍射光谱显示多晶单斜结构，其中 ( 11）高峰期。估计直接和间接跃迁的光学带隙能量分别在 2.67-2.90 eV 和 0.11-1.73 eV 的范围内。从光谱计算折射率和静态介电常数。发现 CuO 和掺杂 Mn 的 CuO (Mn:CuO) 薄膜的电阻率在 10.5 至 28.6 Ω·cm 的范围内。最小电子有效质量是针对 4 at% Mn:CuO 薄膜计算的。在 CuO 薄膜中掺杂 4 at% Mn 时观察到 P 型到 n 型转变。载流子浓度和迁移率分别约为 10 ¹⁷ cm ^–3和 10 ^–1 cm ² /(V·s)。发现霍尔系数介于 9.9 和 29.8 cm ^3之间/C。上述结果表明 Mn:CuO 薄膜在光电应用中的适用性。