As a semiconducting material with relatively low thermal conductivity, MoS₂ nanoflake has the potential to serve as a modulator for optimizing the performance of thermoelectric (TE) materials. However, the low yield of MoS₂ nanoflakes prepared by conventional methods has constrained the development of MoS₂ optimized TE materials. We propose a mechanical exfoliation method for mass production of MoS₂ nanoflakes using attrition mill. After mixed with La and Nb co-doped SrTiO₃ (SLNT) powder, the MoS₂/SLNT composites are fabricated by spark plasma sintering. It is found that the heterojunctions formed at MoS₂/SLNT interfaces with proper band offset can effectively scatter the low-energy electrons, resulting in enhanced Seebeck coefficient without significantly undermining the electrical conductivity. The power factor of composites is improved when the MoS₂ content is lower than 1.5 vol%. Meanwhile, the thermal conductivity of composites is significantly decreased due to the phonon scattering induced large thermal resistance at MoS₂/SLNT interfaces, which is much higher than that in graphene embedded SrTiO₃ composites. Consequently, a maximum ZT = 0.24 is obtained at 800 K in 1.5 vol% MoS₂/SLNT composite, which is ∼26 % higher compared with pristine matrix. This work paves the way for application of TE materials modulated by transition metal dichalcogenides.

作为一种导热率相对较低的半导体材料，MoS ₂纳米薄片具有作为优化热电（TE）材料性能的调节剂的潜力。然而，通过常规方法制备的MoS ₂纳米薄片的低产率限制了MoS ₂优化的TE材料的发展。我们提出了一种使用磨碎机大规模生产MoS ₂纳米薄片的机械剥离方法。与La和Nb共掺杂的SrTiO ₃ (SLNT)粉末混合后，通过放电等离子烧结制备MoS ₂ /SLNT复合材料。发现在 MoS _{2处形成的异质结}/SLNT 界面具有适当的能带偏移可以有效地散射低能电子，从而提高塞贝克系数，而不会显着破坏电导率。当MoS ₂含量低于1.5 vol%时，复合材料的功率因数得到改善。_{同时，由于声子散射导致MoS 2} /SLNT界面处的热阻大，复合材料的热导率显着降低，远高于嵌入石墨烯的SrTiO ₃复合材料。_{因此，在 800 K 和 1.5 vol% MoS 2}中获得最大 ZT = 0.24/SLNT 复合材料，比原始基质高 26%。这项工作为过渡金属二硫属化物调制的热电材料的应用铺平了道路。