Abstract

Zinc oxide (ZnO) and related alloys are regarded as competitive materials for blue and ultraviolet optoelectronic devices, widely used in commercial and military areas for the next-generation applications. In this work, we take into account the effect of geometric structures, material components, axial electric field, and transverse magnetic field on the exciton states of ZnO/MgZnO quantum wells by the variational method within the framework of effective-mass envelope-function theory. Calculations indicate that the exciton binding energy is a nonmonotonic function of the well width. And the exciton binding energy is nonlinear as the Mg component increases. The exciton binding energy decreases with the increase of electric field but increases with the increase of magnetic field. The combined effects of axial electric field and transverse magnetic field on the binding energy indicate that they can compensate each other. In addition, the uncorrelated probability is investigated in the quantum well under the electric and magnetic fields.

中文翻译：

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电场和磁场下 ZnO/MgZnO 量子阱中的激子态

摘要

氧化锌 (ZnO) 和相关合金被认为是蓝色和紫外光电子器件的竞争材料，广泛用于下一代应用的商业和军事领域。在这项工作中，我们在有效质量包络函数理论的框架下，通过变分方法考虑了几何结构、材料成分、轴向电场和横向磁场对 ZnO/MgZnO 量子阱激子态的影响。 . 计算表明激子结合能是井宽的非单调函数。随着 Mg 组分的增加，激子结合能是非线性的。激子结合能随着电场的增加而降低，但随着磁场的增加而增加。轴向电场和横向磁场对结合能的综合影响表明它们可以相互补偿。此外，研究了电场和磁场下量子阱中的不相关概率。