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Twist-angle two-dimensional superlattices and their application in (opto)electronics
Journal of Semiconductors Pub Date : 2022-01-01 , DOI: 10.1088/1674-4926/43/1/011001
Kaiyao Xin 1, 2 , Xingang Wang 1, 2 , Kasper Grove-Rasmussen 2, 3 , Zhongming Wei 1, 2
Affiliation  

Twist-angle two-dimensional systems, such as twisted bilayer graphene, twisted bilayer transition metal dichalcogenides, twisted bilayer phosphorene and their multilayer van der Waals heterostructures, exhibit novel and tunable properties due to the formation of Moiré superlattice and modulated Moiré bands. The review presents a brief venation on the development of “twistronics” and subsequent applications based on band engineering by twisting. Theoretical predictions followed by experimental realization of magic-angle bilayer graphene ignited the flame of investigation on the new freedom degree, twist-angle, to adjust (opto)electrical behaviors. Then, the merging of Dirac cones and the presence of flat bands gave rise to enhanced light-matter interaction and gate-dependent electrical phases, respectively, leading to applications in photodetectors and superconductor electronic devices. At the same time, the increasing amount of theoretical simulation on extended twisted 2D materials like TMDs and BPs called for further experimental verification. Finally, recently discovered properties in twisted bilayer h-BN evidenced h-BN could be an ideal candidate for dielectric and ferroelectric devices. Hence, both the predictions and confirmed properties imply twist-angle two-dimensional superlattice is a group of promising candidates for next-generation (opto)electronics.

中文翻译:

扭转角二维超晶格及其在(光)电子学中的应用

扭曲角二维系统,如扭曲双层石墨烯、扭曲双层过渡金属二硫化物、扭曲双层磷烯及其多层范德瓦尔斯异质结构,由于莫尔超晶格和调制莫尔带的形成而表现出新颖和可调的特性。这篇综述简要介绍了“扭曲电子学”的发展以及基于扭曲能带工程的后续应用。理论预测和魔角双层石墨烯的实验实现点燃了对新自由度、扭曲角的研究火焰,以调整(光)电行为。然后,狄拉克锥体的合并和平带的存在分别增强了光与物质的相互作用和门相关的电相位,导致在光电探测器和超导电子设备中的应用。同时,对 TMD 和 BP 等扩展扭曲二维材料的理论模拟越来越多,需要进一步的实验验证。最后,最近发现的扭曲双层 h-BN 的特性证明 h-BN 可能是介电和铁电器件的理想候选者。因此,预测和确认的特性都表明扭曲角二维超晶格是下一代(光)电子学的一组有前途的候选者。最近在扭曲双层 h-BN 中发现的特性证明 h-BN 可能是介电和铁电器件的理想候选者。因此,预测和确认的特性都表明扭曲角二维超晶格是下一代(光)电子学的一组有前途的候选者。最近在扭曲双层 h-BN 中发现的特性证明 h-BN 可能是介电和铁电器件的理想候选者。因此,预测和确认的特性都表明扭曲角二维超晶格是下一代(光)电子学的一组有前途的候选者。
更新日期:2022-01-01
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