Introducing magnetism into topological insulators (TIs) can tune the topological surface states and produce exotic physical effects. Rare earth elements are considered as important dopant candidates, due to their large magnetic moments from heavily shielded 4f electrons. As the first element with just one 4f electron, cerium (Ce) offers an ideal platform for exploring the doping effect of f-electron in TIs. Here in this work, we have grown cerium-doped topological insulator Bi₂Te₃ thin films on an Al₂O₃(0001) substrate by molecular beam epitaxy (MBE). Electronic transport measurements revealed the Kondo effect, weak anti-localization (WAL) effect and suppression of surface conducting channels by Ce doping. Our research shows the fundamental doping effects of Ce in Bi₂Te₃ thin films, and demonstrates that such a system could be a good platform for further research.

中文翻译：

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分子束外延生长的铈掺杂Bi2Te3薄膜的电输运特性

将磁性引入拓扑绝缘体 (TI) 可以调整拓扑表面状态并产生奇异的物理效应。稀土元素被认为是重要的掺杂剂候选者，因为它们来自重度屏蔽的 4f 电子的大磁矩。作为第一个只有一个 4f 电子的元素，铈 (Ce) 为探索 TIs 中 f 电子的掺杂效应提供了理想的平台。在这项工作中，我们在 Al ₂ O _{3上生长了铈掺杂拓扑绝缘体 Bi 2} Te ₃薄膜(0001) 基板通过分子束外延 (MBE)。电子传输测量揭示了近藤效应、弱反定位 (WAL) 效应和 Ce 掺杂对表面导电通道的抑制。我们的研究显示了 Ce 在 Bi ₂ Te ₃薄膜中的基本掺杂效应，并证明这样的系统可以成为进一步研究的良好平台。