Plasmonic nanolaser as a new type of ultra-small laser, has gain wide interests due to its breaking diffraction limit of light and fast carrier dynamics characters. Normally, the main problem that need to be solved for plasmonic nanolaser is high loss induced by optical and ohmic losses, which leads to the low quality factor. In this work, InGaN/GaN nanoplate plasmonic nanolaser with large interface area were designed and fabricated, where the overlap between SPs and excitons can be enhanced. The lasing threshold is calculated to be ~6.36 kW/cm², where the full width at half maximum (FWHM) drops from 27 to 4 nm. And the fast decay time at 502 nm (sharp peak of stimulated lasing) is estimated to be 0.42 ns. Enhanced lasing characters are mainly attributed to the strong confinement of electromagnetic wave in the low refractive index material, which improve the near field coupling between SPs and excitons. Such plasmonic laser should be useful in data storage applications, biological application, light communication, especially for optoelectronic devices integrated into a system on a chip.

中文翻译：

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使用纳米板 InGaN/GaN 的等离子体激光器中的低阈值激光

等离子纳米激光器作为一种新型的超小型激光器，由于其突破光的衍射极限和快速的载流子动力学特性而受到广泛关注。通常，等离子体纳米激光器需要解决的主要问题是由光学和欧姆损耗引起的高损耗，从而导致品质因数低。在这项工作中，设计和制造了具有大界面面积的 InGaN/GaN 纳米板等离子纳米激光器，可以增强 SP 和激子之间的重叠。激光阈值计算为~6.36 kW/cm ²，其中半峰全宽 (FWHM) 从 27 nm 下降到 4 nm。502 nm 处的快速衰减时间（受激激光的尖峰）估计为 0.42 ns。增强的激光特性主要归因于电磁波在低折射率材料中的强约束，这改善了SPs和激子之间的近场耦合。这种等离子体激光器应该可用于数据存储应用、生物应用、光通信，特别是用于集成到片上系统中的光电器件。