Owing to the high carrier mobility, two-dimensional (2D) gallium antimonite (GaSb) is a promising channel material for field-effect transistors (FETs) in the post-silicon era. We investigated the ballistic performance of the 2D GaSb metal–oxide–semiconductor FETs with a 10 nm-gate-length by the ab initio quantum transport simulation. Because of the wider bandgap and better gate-control ability, the performance of the 10-nm monolayer (ML) GaSb FETs is generally superior to the bilayer counterparts, including the three-to-four orders of magnitude larger on-current. Via hydrogenation, the delay-time and power consumption can be further enhanced with magnitude up to 35% and 57%, respectively, thanks to the expanded bandgap. The 10-nm ML GaSb FETs can almost meet the International Technology Roadmap for Semiconductors (ITRS) for high-performance demands in terms of the on-state current, intrinsic delay time, and power-delay product.

中文翻译：

---

二维 GaSb 晶体管的量子输运模拟

由于高载流子迁移率，二维（2D）锑化镓（GaSb）是后硅时代场效应晶体管（FET）的一种很有前途的沟道材料。我们通过从头算量子传输模拟研究了具有 10 nm 栅极长度的 2D GaSb 金属氧化物半导体 FET 的弹道性能。由于更宽的带隙和更好的栅极控制能力，10nm 单层 (ML) GaSb FET 的性能通常优于双层对应物，包括三到四个数量级的导通电流。通过加氢，由于扩大了带隙，延迟时间和功耗可以进一步提高，分别高达 35% 和 57%。