Titanium boride, TiB_x, thin films were grown by direct current magnetron co-sputtering from a compound TiB₂ target and a Ti target at an Ar pressure of 2.2 mTorr (0.3 Pa) and substrate temperature of 450 °C. While keeping the power of the TiB₂ target constant at 250 W, and by varying the power on the Ti target, P_Ti, between 0 and 100 W, the B/Ti ratio in the film could be continuously and controllably varied from 1.2 to 2.8, with close-to-stoichiometric diboride films achieved for P_Ti = 50 W. This was done without altering the deposition pressure, which is otherwise the main modulator for the composition of magnetron sputtered TiB_x diboride thin films. The film structure and properties of the as-deposited films were compared to those after vacuum-annealing for 2 h at 1100 °C. As-deposited films consisted of small (≲50 nm) randomly oriented TiB₂ crystallites, interspersed in an amorphous, sometimes porous tissue phase. Upon annealing, some of the tissue phase crystallized, but the diboride average grain size did not change noticeably. The near-stoichiometric film had the lowest resistivity, 122 μΩcm, after annealing. Although this film had growth-induced porosity, an interconnected network of elongated crystallites provides a path for conduction. All films exhibited high hardness, in the 25–30 GPa range, where the highest value of ~32 GPa was obtained for the most Ti-rich film after annealing. This film had the highest density and was nano-crystalline, where dislocation propagation is interrupted by the off-stoichiometric grain boundaries.

在 2.2 mTorr (0.3 Pa) 的 Ar 压力和 450 °C 的衬底温度下，通过直流磁控管共溅射从复合 TiB ₂靶和 Ti 靶生长硼化钛 TiB _x薄膜。在保持 TiB ₂靶的功率恒定在 250 W 的同时，通过改变 Ti 靶上的功率P _Ti在 0 和 100 W 之间，薄膜中的 B/Ti 比可以在 1.2 到 1.2 之间连续可控地变化2.8，在P _Ti = 50 W 时实现了接近化学计量的二硼化物薄膜 。这是在不改变沉积压力的情况下完成的，否则沉积压力是磁控溅射 TiB _{x组成的主要调制器}二硼化物薄膜。将沉积薄膜的薄膜结构和性能与在 1100 °C 真空退火 2 小时后的薄膜结构和性能进行比较。沉积的薄膜由小的（≲50 nm）随机取向的TiB _2组成微晶，散布在无定形的，有时是多孔的组织相中。退火后，一些组织相结晶，但二硼化物平均晶粒尺寸没有明显变化。近化学计量的薄膜在退火后具有最低的电阻率，为 122 μΩcm。尽管该薄膜具有生长诱导的孔隙率，但相互连接的细长微晶网络提供了传导路径。所有薄膜都表现出高硬度，在 25-30 GPa 范围内，其中退火后最富含 Ti 的薄膜的最高值约为 32 GPa。该薄膜具有最高密度并且是纳米晶体，其中位错传播被非化学计量的晶界中断。