Ion beam mixing was applied to produce tungsten carbide nano-layers in C/W nano-multilayer structures, which was studied by Auger electron spectroscopy depth profiling. The destructive AES depth profiling caused serious artefacts such as tungsten-carbide production at the interfaces, even when choosing the optimal sputter removal conditions. Here we show that ion mixing due to the AES depth profiling could be described by TRIDYN simulation, and compound formation could be also estimated by introducing a simple model. Thus, despite the serious artefact production the original pristine depth distribution could be reconstructed. This evaluation method has been checked on C/W layer systems containing tungsten-carbide enrichment in the interface region (due to high energy ion beam mixing); the true in-depth distribution could be reconstructed. It has been found also that with increasing carbide formation the artefact production decreases allowing the use the AES depth profiling without reconstruction.

应用离子束混合制备C/W纳米多层结构的碳化钨纳米层，并通过俄歇电子能谱深度剖析对其进行了研究。即使选择了最佳的溅射去除条件，破坏性的 AES 深度剖析也会导致严重的伪影，例如在界面处产生碳化钨。在这里，我们表明由于 AES 深度剖析导致的离子混合可以通过 TRIDYN 模拟来描述，并且还可以通过引入一个简单的模型来估计化合物的形成。因此，尽管产生了严重的人工制品，但可以重建原始的原始深度分布。这种评估方法已经在界面区域含有碳化钨富集的 C/W 层系统上进行了检查（由于高能离子束混合）；可以重建真实的深度分布。