In this work, different amount of Cr₂O₃ (x = 0–0.3 wt%) as dopant were doped into the Aurivillius-type compound Bi_2.8Gd_0.2TiNbO₉ (BGTN), such a kind of Gd/Cr co-doped Bi₃TiNbO₉ ceramics with improved electrical properties were synthesized by the convenient solid-state reaction route. The substitution of Cr³⁺ for Ti⁴⁺ at B-site induced the lattice distortion of pseduo-perovskite layer. Fewer Cr₂O₃ dopant (x<0.2) resulted in the grain refinement of ceramics. After Cr₂O₃ was added into BGTN, T_C decreased to the vicinity of 908 °C. Below T_C, the relaxed dielectric response resulted from charge carriers hopping induced another board dielectric permittivity peak, whose starting temperature shifts toward lower side gradually with increase of x. The values of E_a^con calculated from the Arrhenius relationship between conductivity and temperature indicated the intrinsic conduction at high temperature is dominated by the long-range migration of doubly ionized oxygen vacancies. Moderate Cr₂O₃ dopant (x = 0.1–0.25) are conducive to the enhancement of piezoelectric property and thermal stability. The sample with x = 0.2 achieved both a high T_C∼903 °C and a high d₃₃∼18 pC/N at the same time. Also, its d₃₃ can retain 80% of the initial value after the sample was annealed at 800 °C for 4 h.

在这项工作中，将不同量的 Cr ₂ O ₃ ( x  = 0-0.3 wt%) 作为掺杂剂掺杂到 Aurivillius 型化合物 Bi _2.8 Gd _0.2 TiNbO ₉ (BGTN) 中，这种 Gd/Cr 共掺杂通过方便的固相反应路线合成了具有改善电性能的Bi ₃ TiNbO _9陶瓷。在B位用Cr ³⁺代替Ti ⁴⁺引起了假钙钛矿层的晶格畸变。较少的Cr ₂ O ₃掺杂剂（x <0.2）导致陶瓷的晶粒细化。Cr ₂ O后BGTN中加入3，_T C_降至908℃附近。在T _C以下，由电荷载流子跳跃引起的松弛介电响应引起另一个板介电常数峰值，其起始温度随着x的增加逐渐向低侧移动。由电导率和温度之间的 Arrhenius 关系计算的E _a ^con值表明，高温下的本征传导主要由双电离氧空位的长程迁移决定。中等 Cr ₂ O ₃掺杂剂 ( x = 0.1-0.25）有利于压电性能和热稳定性的增强。x = 0.2的样品同时 达到了高T _C ~903 °C 和高d ₃₃ ~18 pC/N。此外，样品在 800 ℃退火 4 h 后，其d _{33可以保持初始值的 80%。}