External stimuli induced effective regulations of luminescent material are of significant interest in the development of smart optical devices. Here, by simply doping with Er³⁺ in the 0.94Bi_0.5Na_0.5TiO₃-0.06BaTiO₃ (BNTBT) ferroelectric host, using the bendable mica substrate, and exerting mechanical strain (bending) or light illumination (via photochromic reaction), the all-inorganic, highly-transparent and flexible Er-doped BNTBT/Mica luminescent-ferroelectric thin films were designed and fabricated, displaying strain-induced dramatically elevation of up-conversion photoluminescence (PL) intensity, suppression of PL concentration quenching, outstanding endurance and durability, convenient illumination-mediated PL quenching. And the strain-induced structural changes and local lattice distortions of the thin films were further explored through theoretical calculations and Raman measurement. Our results can supply the guidance of designing other luminescent-ferroelectric materials with controlled PL properties via easy mechanical/photo stimuli for expanding the application of multifunctional wearable memory devices.

外部刺激引起的发光材料的有效调节在智能光学器件的开发中具有重要意义。在这里，通过在 0.94Bi _0.5 Na _0.5 TiO ₃ -0.06BaTiO ₃ (BNTBT) 铁电主体中简单地掺杂 Er ³⁺，使用可弯曲的云母基板，并施加机械应变（弯曲）或光照（通过光致变色反应），设计和制造了全无机、高透明和柔韧的掺铒 BNTBT/云母发光铁电薄膜，显示出应变诱导的上转换光致发光（PL）强度的显着升高，抑制 PL 浓度淬火，出色的耐久性和耐用性，方便的光照介导的 PL 淬火。并通过理论计算和拉曼测量进一步探索了薄膜的应变引起的结构变化和局部晶格畸变。我们的研究结果可以通过简单的机械/光刺激为设计其他具有可控 PL 特性的发光铁电材料提供指导，以扩展多功能可穿戴存储设备的应用。