Synchronization of large spin Hall nano-oscillator (SHNO) arrays is an appealing approach toward ultrafast non-conventional computing. However, interfacing to the array, tuning its individual oscillators and providing built-in memory units remain substantial challenges. Here, we address these challenges using memristive gating of W/CoFeB/MgO/AlO_x-based SHNOs. In its high resistance state, the memristor modulates the perpendicular magnetic anisotropy at the CoFeB/MgO interface by the applied electric field. In its low resistance state the memristor adds or subtracts current to the SHNO drive. Both electric field and current control affect the SHNO auto-oscillation mode and frequency, allowing us to reversibly turn on/off mutual synchronization in chains of four SHNOs. We also demonstrate that two individually controlled memristors can be used to tune a four-SHNO chain into differently synchronized states. Memristor gating is therefore an efficient approach to input, tune and store the state of SHNO arrays for non-conventional computing models.

大型自旋霍尔纳米振荡器 (SHNO) 阵列的同步化是实现超快非常规计算的一种极具吸引力的方法。然而，连接到阵列、调整其单独的振荡器和提供内置存储器单元仍然是巨大的挑战。在这里，我们使用 W/CoFeB/MgO/AlO _{x的忆阻门控来应对这些挑战}基于 SHNO。在其高电阻状态下，忆阻器通过施加的电场调制 CoFeB/MgO 界面处的垂直磁各向异性。在其低电阻状态下，忆阻器会增加或减少 SHNO 驱动器的电流。电场和电流控制都会影响 SHNO 自动振荡模式和频率，使我们能够在四个 SHNO 链中可逆地打开/关闭相互同步。我们还证明了两个单独控制的忆阻器可用于将四 SHNO 链调整为不同的同步状态。因此，忆阻器门控是输入、调整和存储非常规计算模型的 SHNO 阵列状态的有效方法。