SiO₂ films were deposited on fused silica substrates by ALD technology. The properties of ALD SiO₂ films irradiated by femtosecond laser were investigated. Raman spectra confirms the molecular structure of SiO₂ films is identical to that of fused silica. The relative content of the three- and four-membered ring of films irradiated is increased. Photoluminescence (PL) spectra shows that the defects of the films irradiated by laser of 10% power ratio are reduced. Indentation tests show that both hardness and elastic modulus are decreased by 1.8%, their standard deviations are decreased by 73.8% and 46.8% respectively. Scratch experiments exhibit that femtosecond irradiation improves the bonding performance of the films, and the critical load is increased by 10.8%. Meanwhile, the standard deviations of the lateral load and penetration depth are decreased on average from 0.0636 to 0.0336, from 8.3478 to 1.6747, individually. The plastic deformation ratio of the films are increased from 19.80% to 28.89%. The morphology and cross section of the scratches observed by optical microscopy and confocal laser microscopy suggest that the damage form of the films irradiated by laser is changed from the brittle fracture removal form to the mixed removal form of brittle fracture and plastic.

SiO ₂薄膜通过ALD技术沉积在熔融石英衬底上。研究了飞秒激光辐照ALD SiO ₂薄膜的性能。拉曼光谱证实了 SiO ₂的分子结构薄膜与熔融石英的薄膜相同。被辐照的薄膜的三元环和四元环的相对含量增加。光致发光（PL）光谱表明，10%功率比的激光照射后薄膜缺陷减少。压痕测试表明，硬度和弹性模量均降低了1.8%，标准偏差分别降低了73.8%和46.8%。划痕实验表明，飞秒辐照提高了薄膜的结合性能，临界载荷增加了10.8%。同时，横向载荷和穿透深度的标准偏差平均分别从0.0636下降到0.0336，从8.3478下降到1.6747。薄膜的塑性变形率从19.80%提高到28.89%。