Among the IV–VI compounds, GeSe has wide applications in nanoelectronics due to its unique photoelectric properties and adjustable band gap. Even though modulation of its physical characteristics, including the band gap, by an external field will be useful for designing novel devices, experimental work is still rare. Here, we report a detailed anisotropic Raman response of GeSe flakes under uniaxial tension strain. Based on theoretical analysis, the anisotropy of the phonon response is attributed to a change in anisotropic bond length and bond angle under in-plane uniaxial strain. An enhancement in anisotropy and band gap is found due to strain along the ZZ or AC directions. This study shows that strain-engineering is an effective method for controlling the GeSe lattice, and paves the way for modulating the anisotropic electric and optical properties of GeSe.

中文翻译：

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GeSe 的应变工程：拉曼光谱研究

在 IV-VI 化合物中，GeSe 由于其独特的光电特性和可调节的带隙，在纳米电子学中有着广泛的应用。尽管通过外部场对其物理特性（包括带隙）的调制将有助于设计新设备，但实验工作仍然很少。在这里，我们报告了单轴拉伸应变下 GeSe 薄片的详细各向异性拉曼响应。根据理论分析，声子响应的各向异性归因于面内单轴应变下各向异性键长和键角的变化。由于沿 ZZ 或 AC 方向的应变，发现了各向异性和带隙的增强。该研究表明应变工程是控制 GeSe 晶格的有效方法，