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Room temperature two terminal tunnel magnetoresistance in a lateral graphene transistor
Nanoscale ( IF 6.7 ) Pub Date : 2021-11-19 , DOI: 10.1039/d1nr05495c
C I L de Araujo 1 , H A Teixeira 1 , O O Toro 1 , C Liao 2 , L C Benetti 2, 3 , J Borme 2 , D Schafer 3 , I Brandt 3 , R Ferreira 2 , P Alpuim 2 , Paulo P Freitas 2 , A A Pasa 3
Affiliation  

We investigate the behavior of both pure spin and spin-polarized currents measured with four-probe non-local and two probe local configurations up to room temperature and under an external gate voltage in a lateral graphene transistor, produced using a standard large-scale microfabrication process. The high spin diffusion length of pristine graphene in the channel, measured both directly and by the Hanle effect, and the tuning of the relationship between the electrode resistance areas present in the device architecture allowed us to observe local tunnel magnetoresistance at room temperature, a new finding for this type of device. The results also indicate that while pure spin currents are less sensitive to temperature variations, spin-polarized current switching by an external voltage is more efficient, due to a combination of the Rashba effect and a change in carrier mobility by a Fermi level shift.

中文翻译:

横向石墨烯晶体管中的室温两端隧道磁阻

我们研究了纯自旋和自旋极化电流的行为,使用四探针非局部和两个探针局部配置在室温和外部栅极电压下在横向石墨烯晶体管中测量,使用标准的大规模微加工生产过程。通道中原始石墨烯的高自旋扩散长度(直接测量和通过汉勒效应测量)以及器件结构中存在的电极电阻区域之间关系的调整使我们能够在室温下观察局部隧道磁阻,这是一种新的寻找这种类型的设备。结果还表明,虽然纯自旋电流对温度变化不太敏感,但通过外部电压切换自旋极化电流的效率更高,
更新日期:2021-11-29
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