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Trapping centers in Bi12TiO20 single crystals by thermally stimulated current
Optical Materials ( IF 3.9 ) Pub Date : 2021-11-23 , DOI: 10.1016/j.optmat.2021.111797
M. Isik 1 , S. Delice 2 , N.M. Gasanly 3, 4 , N.H. Darvishov 5 , V.E. Bagiev 5
Affiliation  

Sillenite group compounds have been widely utilized in photocatalytic applications. One of the member of this group, Bi12TiO20 single crystal, was grown by Czochralski method. The structural properties were investigated by x-ray diffraction (XRD) and scanning electron microscope (SEM) techniques. XRD pattern presented well-defined intensive peaks associated with cubic crystalline structure. SEM images indicated the crystal surface as almost uniform and smooth. Thermally stimulated current (TSC) experiments were performed in the 10–280 K temperature range to reveal shallow trapping centers in the Bi12TiO20 single crystal. Two peaks around 112 and 179 K were observed in the TSC glow curve. The analyses of these curves considering the curve fitting and peak shape techniques resulted in presence of two hole centers at 0.09 and 0.14 eV. Heating rate dependencies of peak maximum temperature and current were also investigated throughout the paper.



中文翻译:

通过热激电流捕获 Bi12TiO20 单晶的中心

亚硅石族化合物已广泛用于光催化应用。该组的成员之一,Bi 12 TiO 20单晶,是通过直拉法生长的。通过X射线衍射(XRD)和扫描电子显微镜(SEM)技术研究了结构特性。XRD 图案呈现出与立方晶体结构相关的明确定义的强峰。SEM 图像表明晶体表面几乎均匀且光滑。在 10-280 K 温度范围内进行热刺激电流 (TSC) 实验,以揭示 Bi 12 TiO 20中的浅捕获中心单晶。在 TSC 辉光曲线中观察到 112 和 179 K 附近的两个峰。考虑到曲线拟合和峰形技术对这些曲线的分析导致在 0.09 和 0.14 eV 处存在两个孔中心。在整篇论文中还研究了峰值最高温度和电流的加热速率依赖性。

更新日期:2021-11-24
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