Electrostatically controlling material phases has been a long-standing challenge. While it is partially achieved by electrostatic gating with ionic liquid, it often involves unintended chemical reactions. In this sense, it has recently attracted tremendous attention that a solid-state electrostatic gating is successfully applied to insulator-metal transition by using ultrahigh-permittivity gate dielectrics. However, the detailed characteristics of this new class of device are totally unknown. Here, systematic studies are performed on the three-terminal device using VO₂ insulator-metal transition and TiO₂ gate dielectrics, and for the first time the pinch-off effect in phase transition devices is observed, a clear sign of electrostatic gating. Furthermore, the increase in the drain voltage has a “catalytic effect” of drastically sharpening the gate-induced transition, demonstrating a 0.1 V gate control. The characteristics are simulated by a quasi-equilibrium model, providing the firm ground for electrical control of material phases with high speed and high resolution.

中文翻译：

---

对金属-绝缘体过渡的静电门控过程中夹断效应的观察

静电控制材料相一直是一个长期存在的挑战。虽然它是通过离子液体的静电门控部分实现的，但它通常涉及意想不到的化学反应。从这个意义上说，最近引起了极大的关注，即通过使用超高介电常数栅极电介质将固态静电门控成功应用于绝缘体-金属过渡。然而，这种新型设备的详细特性是完全未知的。_{在此，对使用VO 2}绝缘体-金属过渡和TiO ₂的三端器件进行了系统研究。栅极电介质，并且首次观察到相变器件中的夹断效应，这是静电门控的明显迹象。此外，漏极电压的增加具有显着锐化栅极诱导跃迁的“催化效应”，显示出 0.1 V 的栅极控制。这些特性通过准平衡模型进行模拟，为高速、高分辨率的材料相电控制提供了坚实的基础。