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Effect of number of quantum wells on modulation and distortion characteristics of transistor laser
Optics & Laser Technology ( IF 5 ) Pub Date : 2021-11-20 , DOI: 10.1016/j.optlastec.2021.107655
R. Ranjith 1 , S. Piramasubramanian 2 , M. Ganesh Madhan 2
Affiliation  

Numerical analysis on the effect of number of quantum wells (QW) on the modulation and distortion characteristics of 1300 nm Transistor Laser (TL) is reported. The terminal currents are found by using triangular charge model in the base region. The parameters such as threshold current and optical power are analyzed from the DC characteristics for different number of quantum wells. Modulation depth, frequency response are determined by providing an ac input signal with dc bias offset. It is found that the modulation depth decreases for increasing the number of quantum wells and input bias current under CE and CB configuration respectively. From this analysis, the Transistor Laser bandwidth, resonance frequency are estimated for different number of quantum wells and a maximum bandwidth of 27.5 GHz and 44.3 GHz for 25Ith are observed under CE and CB configurations respectively. Further, the distortion characteristics such as second harmonic and intermodulation products are analyzed at 2.4 GHz band for Radio over Fiber applications. The magnitude of 2HD and IMD3 components are found to decrease for increase in number of quantum wells and bias current under both CE and CB configurations. A minimum value of magnitude of 2HD components is obtained as −27.58 dBc at 25IBth and −17.82 dBc at 1.8IEth under CE and CB configuration respectively for six quantum wells in the transistor laser. Similarly, minimum value of IMD3 magnitude is obtained as − 40.47 dBc at 25IBth and − 36.91 dBc at 1.8IEth under CE and CB configuration respectively. A maximum Spurious Free Dynamic Range of 58.85 dB-Hz2/3 is predicted at 10IEth for four number of quantum wells under CE configuration.



中文翻译:

量子阱数量对晶体管激光器调制和畸变特性的影响

报道了量子阱数 (QW) 对 1300 nm 晶体管激光器 (TL) 调制和畸变特性影响的数值分析。利用基区三角电荷模型求出端电流。从不同数量量子阱的直流特性分析阈值电流和光功率等参数。通过提供具有直流偏置偏移的交流输入信号来确定调制深度、频率响应。发现在CE和CB配置下,调制深度分别随着量子阱数量和输入偏置电流的增加而减小。从这个分析中,晶体管激光器的带宽、谐振频率被估计为不同数量的量子阱和 25I th的最大带宽为 27.5 GHz 和 44.3 GHz分别在 CE 和 CB 配置下观察到。此外,还针对光纤无线电应用在 2.4 GHz 频段分析了失真特性,例如二次谐波和互调产物。发现在 CE 和 CB 配置下,2HD 和 IMD3 分量的大小随着量子阱数量和偏置电流的增加而降低。2HD部件的大小的最小值被获得为-27.58 dBc的在25I Bth的和-17.82 dBc的在1.8I的Eth在晶体管激光6个量子阱分别CE下和CB配置。在25I 40.47 dBc的-类似地,获得IMD3大小的最小值作为Bth的和- 36.91 dBc的在1.8I的Eth分别在 CE 和 CB 配置下。对于 CE 配置下的四个量子阱,预测在 10I Eth下的最大无杂散动态范围为 58.85 dB-Hz 2/3

更新日期:2021-11-20
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