The demonstration of a germanium-based photodiode with a 3 dB bandwidth of 265 GHz and compatibility with silicon photonics and CMOS fabrication offers a cost-effective route to faster channel data rates for optical communications.

中文翻译：

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超快片上锗光电二极管

具有 3 dB 带宽为 265 GHz 且与硅光子学和 CMOS 制造兼容的锗基光电二极管的演示提供了一条具有成本效益的途径，可实现更快的光通信通道数据速率。