GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management, all of which are poorly discussed in the literature. Herein, a specific GeSn-on-insulator (GeSnOI) stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV semiconductor lasers on a versatile photonic platform for the near- and mid-infrared spectral range. Microdisk-shape resonators on mesa structures were fabricated from GeSnOI, after bonding a Ge_0.9Sn_0.1 alloy layer grown on a Ge strain-relaxed-buffer, itself on a Si(001) substrate. The GeSnOI microdisk mesas exhibited significantly improved optical gain as compared to that of conventional suspended microdisk resonators formed from the as-grown layer. We further show enhanced vertical out-coupling of the disk whispering gallery mode in-plane radiation, with up to 30% vertical out-coupling efficiency. As a result, the GeSnOI approach can be a valuable asset in the development of silicon-based mid-infrared photonics that combine integrated sources in a photonic platform with complex lightwave engineering.

GeSn合金是用于与CMOS兼容的中红外激光器制造的有前途的材料。事实上，锡合金化和拉伸应变可以将它们转化为直接带隙半导体。然而，这种不断发展的激光技术受到许多限制，例如较差的光学限制、缺乏应变、热和缺陷管理，所有这些都在文献中很少讨论。在此，使用应力层作为介电光学包层的特定 GeSn-on-insulator (GeSnOI) 堆栈被证明适用于在近红外和中红外光谱的多功能光子平台上单片集成平面 IV 族半导体激光器。范围。在结合 Ge _0.9 Sn _0.1之后，台面结构上的微盘形谐振器由 GeSnOI 制成合金层生长在 Ge 应变松弛缓冲器上，其本身在 Si(001) 衬底上。与由生长层形成的传统悬浮微盘谐振器相比，GeSnOI 微盘台面显示出显着改善的光学增益。我们进一步展示了磁盘回音壁模式面内辐射的增强垂直外耦合，垂直外耦合效率高达 30%。因此，GeSnOI 方法可以成为开发硅基中红外光子学的宝贵资产，该技术将光子平台中的集成源与复杂的光波工程相结合。