Insightful knowledge on quantum nanostructured materials is paramount to engineer and exploit their vast gamut of applications. Here, a formalism based on the single-band effective mass equation was developed to determine the light absorption of colloidal quantum dots (CQDs) embedded in a wider bandgap semiconductor host, employing only three parameters (dots/host potential barrier, effective mass, and QD size). It was ascertained how to tune such parameters to design the energy level structure and consequent optical response. Our findings show that the CQD size has the biggest effect on the number and energy of the confined levels, while the potential barrier causes a linear shift of their values. While smaller QDs allow wider energetic separation between levels (as desired for most quantum-based technologies), the larger dots with higher number of levels are those that exhibit the strongest absorption. Nevertheless, it was unprecedently shown that such quantum-enabled absorption coefficients can reach the levels (10⁴–10⁵cm⁻¹) of bulk semiconductors.

对量子纳米结构材料的深入了解对于设计和开发其广泛的应用至关重要。在这里，开发了一种基于单带有效质量方程的形式，以确定嵌入在更宽禁带半导体主体中的胶体量子点 (CQD) 的光吸收，仅使用三个参数（点/主体势垒、有效质量和量子点大小）。确定了如何调整这些参数以设计能级结构和随后的光学响应。我们的研究结果表明，CQD 尺寸对受限能级的数量和能量影响最大，而势垒会导致它们的值线性偏移。虽然较小的 QD 允许更广泛的能级之间的能量分离（正如大多数基于量子的技术所期望的那样），具有较高级数的较大点是那些表现出最强吸收的点。然而，史无前例地表明，这种量子使能吸收系数可以达到（10⁴ –10 ⁵ cm ^-1 ) 块状半导体。