The critical prerequisite for realizing the industrial application of photocatalytic technology lies on developing efficient photocatalyst through reasonable and large-scale modification strategy. Herein, the rapid and solvent-free high-energy ball-milling procedure was adopted to modify graphitic carbon nitride (g-C₃N₄) on a large-scale by phosphorus (P) atom doping and molybdenum phosphide (MoP) decorating. It is confirmed that P doping can introduce a mid-gap state in the band gap of g-C₃N₄, broadening the light responsive region and enhancing the electrical conductivity of g-C₃N₄. The MoN bond at the interface of P-doped g-C₃N₄ and MoP acting as electrons “delivery channels” facilitates the charge transfer from P-doped g-C₃N₄ to MoP, while the Schottky barrier promotes the separation of photocarriers. As a result, the optimized P-doped g-C₃N₄/MoP photocatalyst performs an improved H₂ evolution rate of 4917.83 μmol·g⁻¹·h⁻¹ and a favorable H₂ production stability. This work offers a replicable prototype on adopting high-energy ball-milling to modify photocatalyst.

实现光催化技术工业化应用的关键前提是通过合理、大规模的改性策略开发高效的光催化剂。在此，采用快速无溶剂高能球磨工艺，通过磷（P）原子掺杂和磷化钼（MoP）修饰，对石墨氮化碳（gC ₃ N ₄）进行了大规模改性。证实P掺杂可以在gC ₃ N ₄的带隙中引入中带隙状态，拓宽光响应区域并提高gC ₃ N _{4 的}电导率。P掺杂gC ₃ N ₄界面处的Mo N键和充当电子“传输通道”的 MoP 促进了从 P 掺杂的 gC ₃ N ₄到 MoP的电荷转移，而肖特基势垒促进了光载流子的分离。结果，优化的P掺杂gC ₃ N ₄ /MoP光催化剂的H ₂析出速率提高了4917.83 μmol·g ^-1 ·h ^-1和良好的H ₂生产稳定性。这项工作为采用高能球磨改性光催化剂提供了可复制的原型。