The effects of contact barrier height on performances of Si/BaSi₂ p–n heterojunction, BaSi₂ p–n homojunction and Si/BaSi₂/Si p–i–n heterojunction were numerical calculated. Band energy diagram, built-in electric field, carrier generation and carrier transportation distributed in the devices are comprehensively investigated. BaSi₂ p–n homojunction solar cells are very sensitive to front contact barrier height due to the high light absorption coefficient of front p-BaSi₂ layer. Si/BaSi₂ p–n heterojunction and BaSi₂ p–n homojunction solar cells with donor concentration (ND) less than 1017 cm−3 are apparently affected by back contact barrier height. The ideal α-Si/BaSi₂/α-Si p–n solar cell achieves a high Voc of 1.131 V, suggesting a promising and alternative structure to gain excellent BaSi₂-based solar cells once the Urbach tail states and defects can be effectively eliminated. The results help to fundamentally understand operation mechanism and provide intuitive guidance for achieving high-efficiency BaSi₂ solar cells.

中文翻译：

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接触势垒高度对BaSi2异质结和同质结太阳能电池性能的影响

数值计算了接触势垒高度对Si/BaSi ₂ p-n异质结、BaSi ₂ p-n同质结和Si/BaSi ₂ /Si p-i-n异质结性能的影响。综合研究了器件中分布的带能图、内建电场、载流子产生和载流子传输。_{由于前 p-BaSi 2}层的高光吸收系数，BaSi _{2 p-n 同质结太阳能电池对前接触势垒高度非常敏感。}施主浓度的Si/BaSi ₂ p-n 异质结和 BaSi ₂ p-n 同质结太阳能电池(ñD)少于1017 厘米-3显然受到背接触势垒高度的影响。理想α-Si/BaSi ₂ /α-Si p-n太阳能电池实现了高五oc1.131 V，表明一旦Urbach尾态和缺陷可以被有效消除，就有希望获得优异的BaSi _{2基太阳能电池的替代结构。}研究结果有助于从根本上理解运行机制，为实现高效BaSi ₂太阳能电池提供直观的指导。