Dual-wavelength Q-switched lasers have currently received extensive attention due to their wide applications in nonlinear optoelectronic devices. Their main mechanism can be based on the integration of laser with devices such as dual defective photonic crystals (DPCs). Nonetheless, DPCs with a high modulation depth is still demanding in this field. Toward this goal, in this paper, we have designed a dual DPC with MoS₂ monolayers as defects in this structure. Defect modes helped adjust the wavelength by the distance between the two defects, and finally, a tunable wavelength was created by changing the intensity, incident angle, and polarization. Using the dual DPC, modulation depth was increased to 97% and 85% in the dual defect modes and a wide range of light intensities was achieved with over 80% of absorption, which helps accomplish a tunable dual Q-switching operation.

双波长调Q激光器因其在非线性光电器件中的广泛应用而受到广泛关注。它们的主要机制可以基于激光与双缺陷光子晶体 (DPC) 等设备的集成。尽管如此，该领域仍然需要具有高调制深度的 DPC。为了实现这个目标，在本文中，我们设计了一个带有 MoS ₂的双 DPC单层作为这种结构中的缺陷。缺陷模式有助于通过两个缺陷之间的距离来调整波长，最后，通过改变强度、入射角和偏振产生可调波长。使用双 DPC，双缺陷模式的调制深度增加到 97% 和 85%，并且在超过 80% 的吸收下实现了广泛的光强度范围，这有助于实现可调谐的双 Q 开关操作。