Passivating contact crystalline silicon solar cells are among the most promising industrially feasible photovoltaic (PV) technologies and require excellent physical contacts to handle device performance. Here, we report a versatile polysilicon (poly-Si) film intentionally doped with carbon (C) to suppress blistering and improve physical contacts. Our investigations of blistering mechanisms reveal that the reduced crystallization fraction of poly-Si in conjunction with the suppressed level of hydrogen release should primarily be responsible for the blistering-free appearance of the C-doped poly-Si films. Moreover, additional advantages of high-quality passivation with a high implied open-circuit voltage (iV_oc) exceeding 750 mV and an excellent optical response in the infrared band with a net current-density gain of 0.31 mA cm⁻² are endowed to the C-doped poly-Si films. Consequently, the proof-of-concept devices featuring C-doping show a champion efficiency of 24.27%, which is 1.18% higher than that of the C-free counterparts (23.09%). Also, we present a certified efficiency of 23.82%, suggesting that the C-doped poly-Si has the potential to achieve high-efficiency c-Si solar cells.

中文翻译：

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用于钝化接触太阳能电池的双功能碳掺杂多晶硅薄膜：调节物理接触同时促进光电性能

钝化接触晶体硅太阳能电池是最有前途的工业可行光伏 (PV) 技术之一，需要出色的物理接触来处理设备性能。在这里，我们报告了一种有意掺杂碳 (C) 的多功能多晶硅 (poly-Si) 薄膜，以抑制起泡并改善物理接触。我们对起泡机制的研究表明，多晶硅结晶分数的降低以及氢释放水平的抑制应该是 C 掺杂多晶硅薄膜无起泡外观的主要原因。此外，具有高隐含开路电压 (i V _oc) 超过 750 mV 并且在红外波段具有出色的光学响应，净电流密度增益为 0.31 mA cm ^-2被赋予了 C 掺杂的多晶硅薄膜。因此，具有 C 掺杂的概念验证设备显示出 24.27% 的冠军效率，比无 C 对应物（23.09%）高 1.18%。此外，我们提出了 23.82% 的认证效率，这表明 C 掺杂的多晶硅具有实现高效 c-Si 太阳能电池的潜力。