We studied structure and dynamics in liquid Ge and ${\text{Si}}_{20}{\text{Ge}}_{80}$. Quasielastic neutron scattering (QNS) was employed to accurately determine the Ge self-diffusion coefficient. Static structure factors were measured using neutron and x-ray diffraction. Containerless processing via electromagnetic levitation (EML) enabled to obtain structure factors over a broad temperature range from the metastable regime of the undercooled melt to several hundred Kelvin above the melting point. Moreover, isotopic substitution and combination with x-ray diffraction allowed to determine the partial structure factors $S_{\mathrm{NN}}\left(q\right), S_{\mathrm{NC}}\left(q\right), S_{\mathrm{GeGe}}\left(q\right)$, and $S_{\mathrm{GeSi}}\left(q\right)$ for liquid ${\text{Si}}_{20}{\text{Ge}}_{80}$. The topological structures of liquid Ge and ${\text{Si}}_{20}{\text{Ge}}_{80}$ are very similar. In addition, the Ge self-diffusion coefficients in liquid Ge and ${\text{Si}}_{20}{\text{Ge}}_{80}$ are equal within error limits.

中文翻译：

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中子散射和X射线衍射研究液态Ge和Si20Ge80中的短程有序和原子扩散

我们研究了液态锗的结构和动力学， ${\text{硅}}_{20}{\text{葛}}_{80}$. 采用准弹性中子散射 (QNS) 来准确确定 Ge 自扩散系数。使用中子和 X 射线衍射测量静态结构因子。通过电磁悬浮 (EML) 进行的无容器加工能够在从过冷熔体的亚稳态到熔点以上数百开尔文的广泛温度范围内获得结构因子。此外，同位素取代和结合 x 射线衍射允许确定部分结构因素${秒}_{\mathrm{神经网络}}\left(q\right), {秒}_{\mathrm{数控}}\left(q\right), {秒}_{\mathrm{格格}}\left(q\right)$， 和 ${秒}_{\mathrm{锗硅}}\left(q\right)$ 液体用 ${\text{硅}}_{20}{\text{葛}}_{80}$. 液态锗的拓扑结构${\text{硅}}_{20}{\text{葛}}_{80}$非常相似。此外，液态锗中的锗自扩散系数和${\text{硅}}_{20}{\text{葛}}_{80}$ 在误差范围内相等。