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Novel N-Black In2O3−x/InVO4 heterojunction for efficient photocatalytic fixation: synergistic effect of exposed (321) facet and oxygen vacancy
Journal of Materials Chemistry A ( IF 11.9 ) Pub Date : 2021-10-08 , DOI: 10.1039/d1ta08257d
Jin Ye 1 , Jiating Xu 1 , Chunsheng Li 1 , Di Tian 2 , Xiaohan Zhao 3 , Qiang Wang 1 , Wubin Lv 1 , Jun Wang 1 , Haijiao Xie 4 , Yudong Li 5 , Zhiguo Liu 1 , Yujie Fu 1
Affiliation  

Utilizing semiconductors to catalyze the conversion of N2 to NH3 has brought great promise in alleviating the issue of energy shortage. However, the wide band gap and high recombination rate of photogenerated (e/h+) charge restrict their photocatalytic efficiency. Herein, a novel catalyst, N-Black In2O3−x/InVO4 was developed by coupling InVO4 nanosheets into defect-rich N-Black In2O3−x nanorods to construct multiple heterojunctions using the NH2-MIL-68(In) metal–organic-framework as a template. The N-Black In2O3−x/InVO4 multiple heterojunctions with oxygen vacancies could expand the light absorption range, act as electron trap centers, promote the separation of photogenerated carriers, and significantly improve the adsorption as well as activation of N2. Density functional theory (DFT) calculations revealed that the exposed (321) planes of the N-Black In2O3−x possess a higher surface energy than the (222) planes, which indicates that the exposed (321) planes can adsorb more N2 molecules and transform them into NH3 molecules. Consequently, owing to the efficient separation of photogenerated carriers, the nitrogen fixation rate of the N-Black In2O3−x/InVO4 heterostructure was as high as 2.07 mmol g−1 h−1 without any organic scavengers and precious-metal cocatalysts, which was 20.7, 2.4, 2.1, and 1.8 times that of NH2-MIL-68(In), N-In2O3, InVO4, and N-Black In2O3−x, respectively.

中文翻译:

用于高效光催化固定的新型 N-Black In2O3−x/InVO4 异质结:暴露的 (321) 面和氧空位的协同效应

利用半导体催化N 2转化为NH 3为缓解能源短缺问题带来了巨大希望。然而,宽带隙和光生(e - /h +)电荷的高复合率限制了它们的光催化效率。在此,通过将 InVO 4纳米片耦合到富含缺陷的 N-Black In 2 O 3- x纳米棒中以使用 NH 2 -MIL-构建多个异质结,开发了一种新型催化剂 N-Black In 2 O 3- x /InVO 4 68(In) 金属-有机框架作为模板。N-Black In 2具有氧空位的O 3− x /InVO 4多重异质结可以扩大光吸收范围,充当电子陷阱中心,促进光生载流子的分离,并显着提高N 2的吸附和活化。密度泛函理论 (DFT) 计算表明,N-Black In 2 O 3− x的暴露 (321) 面具有比 (222) 面更高的表面能,这表明暴露的 (321) 面可以吸附更多N 2分子并将它们转化为 NH 3分子。因此,由于光生载流子的有效分离,N-Black In 2 O 3- x /InVO 4异质结构的固氮率高达2.07 mmol g -1 h -1 且不含任何有机清除剂和贵金属分别是 NH 2 -MIL-68(In)、N-In 2 O 3、InVO 4和 N-Black In 2 O 3- x 的20.7、2.4、2.1和 1.8 倍。
更新日期:2021-10-26
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