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The van der Waals Epitaxy of High-Quality N-Polar Gallium Nitride for High-Response Ultraviolet Photodetectors with Polarization Electric Field Modulation
Advanced Electronic Materials ( IF 6.2 ) Pub Date : 2021-10-20 , DOI: 10.1002/aelm.202100759
Yang Chen 1 , Zhiming Shi 1 , Shanli Zhang 1 , Jianwei Ben 1 , Ke Jiang 1 , Hang Zang 1 , Yuping Jia 1 , Wei Lü 1, 2 , Dabing Li 1 , Xiaojuan Sun 1
Affiliation  

High-quality and polarity-controlled III-nitride is crucial for realizing high-performance and new types of device designs with rich functionalities, but there are still many difficulties for obtaining N-polar III-nitrides till now. In this work, the van der Waals epitaxy of high-quality N-polar gallium nitride (GaN) is reported by innovatively inserting a thin MoS2 layer. Due to the remission of thermal and lattice mismatch by the week van der Waals force in 2D MoS2 insert layer, the N-polar GaN exhibits high crystalline quality and reduced residual stress. The proposed atom deposition kinetics for the van der Waals epitaxy of the polarity-controlled aluminium nitride nucleation layer and GaN epilayer on the MoS2 lighten the great potentiality for the application of similar 2D materials. The ultraviolet photodetector based on N-polar GaN possesses over seven times’ response higher than that of the Ga-polar one, which is both beneficial from the high crystalline quality and efficient polarization electric field control of the N-polar GaN. Present work provides a new strategy for the polarity control of high-quality III-nitrides by the van der Waals epitaxy with a novel 2D insert layer, which would be also extended in other optoelectronic and electronic devices.

中文翻译:

用于具有极化电场调制的高响应紫外光电探测器的高质量 N 极氮化镓的范德华外延

高质量和极性可控的III族氮化物对于实现高性能和功能丰富的新型器件设计至关重要,但目前获得N极性III族氮化物仍存在许多困难。在这项工作中,通过创新地插入薄的 MoS 2层报告了高质量 N 极性氮化镓 (GaN) 的范德华外延。由于 2D MoS 2插入层中的范德华力缓解了热失配和晶格失配,N 极性 GaN 表现出高结晶质量并降低了残余应力。MoS 2上极性控制的氮化铝成核层和 GaN 外延层的范德华外延的原子沉积动力学减轻类似二维材料应用的巨大潜力。基于 N 极 GaN 的紫外光电探测器的响应比 Ga 极高 7 倍以上,这既有利于 N 极 GaN 的高结晶质量和高效的极化电场控制。目前的工作为通过范德华外延和新型二维插入层控制高质量 III 族氮化物的极性提供了一种新策略,该策略也将扩展到其他光电和电子器件中。
更新日期:2021-10-20
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