MoS₂ is considered a promising candidate as a channel material for the next generation semiconductor devices owing to its atomic thickness and electrical properties. However, due to the limited resolution of the photolithography, the short channel length MoS₂ transistor is still inclusive. In this work, a method to fabricate MoS₂ transistors with short channel length is demonstrated, which is realized by the self-oxidization of aluminum to form an effective isolation between the source and drain electrodes. By this method, 10 nm transistors with 3.65 nm thick multilayer MoS₂ are realized. Despite the short channel length, the devices still exhibit a good on/off ratio. Both the transmission electron microscope image and electrical characteristics reveal the realization of 10 nm short channel, and the simulation results also prove it. Throughout aluminum self-oxidization technology, transistors with 10 nm channel length can be defined by lithography with 100 nm precision. The 2D transistors with self-oxidized short channel length reduce the threshold of the 10 nm channel's fabrication, and provide new opportunities for scaling down the 2D material-based transistors.

中文翻译：

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没有光刻分辨率要求的 10 nm 短通道 MoS2 晶体管

由于其原子厚度和电学特性，MoS ₂被认为是下一代半导体器件的通道材料的有希望的候选者。然而，由于光刻的分辨率有限，短沟道长度的MoS ₂晶体管仍然包含在内。在这项工作中，展示了一种制造短沟道长度的MoS ₂晶体管的方法，该方法是通过铝的自氧化在源电极和漏电极之间形成有效隔离来实现的。通过这种方法，具有 3.65 nm 厚多层 MoS _{2 的}10 nm 晶体管实现。尽管沟道长度很短，但这些器件仍然表现出良好的开/关比。透射电子显微镜图像和电学特性都揭示了10 nm短通道的实现，仿真结果也证明了这一点。在整个铝自氧化技术中，沟道长度为 10 nm 的晶体管可以通过 100 nm 精度的光刻来定义。具有自氧化短沟道长度的 2D 晶体管降低了 10 nm 沟道制造的门槛，并为缩小基于 2D 材料的晶体管提供了新的机会。