Recently, there is a surge of research interest in configurable ferroelectric conductive domain walls which have been considered as possible fundamental building blocks for future electronic devices. In this work, by using piezoresponse force microscopy and conductive atomic force microscopy, we demonstrated the controlled manipulation of various conductive domain walls in epitaxial BiFeO₃ thin films, e.g. neutral domain walls (NDW) and charged domain walls (CDWs). More interestingly, a specific type of nanoscale domains was also identified, which are surrounded by highly conductive circular CWDs. Similar nanoscale domains can also be controlled created and erasured by applying local field via conductive probe, which allow nondestructive current readout of different domain states with a large on/off resistance ratio up to 10². The results indicate the potential to design and develop high-density non-volatile ferroelectric memories by utilizing these programable conductive nanoscale domain walls.

最近，对可配置铁电导电畴壁的研究兴趣激增，这些畴壁被认为是未来电子设备的可能基础构件。在这项工作中，通过使用压电响应力显微镜和导电原子力显微镜，我们展示了外延 BiFeO ₃薄膜中各种导电畴壁的受控操作，例如中性畴壁（NDW）和带电畴壁（CDW）。更有趣的是，还确定了一种特定类型的纳米级域，它们被高导电圆形 CWD 包围。类似的纳米级域也可以通过导电探针施加局部场来控制创建和擦除，这允许以高达 10 ²的大开/关电阻比无损读取不同域状态的电流。结果表明，利用这些可编程的导电纳米级畴壁设计和开发高密度非易失性铁电存储器的潜力。