Large-signal modeling of Gallium Nitride (GaN) based high electron mobility transistors (HEMTs) demands a proper description of trapping effects. In this paper, a new, simplified yet accurate drain-lag description is proposed, enhancing the simulation accuracy and the extraction flow of the physics-based compact model ASM-HEMT. The present study investigates the impact of drain lag on specific physical phenomena, focusing on the relation between trap states, surface-potential calculations, and electron transport properties. It is supplemented with a revised extraction procedure, minimizing the required measurements, thereby the undesired consequences of several passes on the same device, using pulsed I-V and pulsed S-parameters only, and approaches for efficient and accurate simulation results. We show that the proposed trap model is a determinative tool for simulating both small and large-signal behavior predicting precisely S-parameters and load-pull performance.

中文翻译：

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基于 ASM-HEMT 的微波 GaN HEMT 高效漏极滞后模型

基于氮化镓 (GaN) 的高电子迁移率晶体管 (HEMT) 的大信号建模需要正确描述俘获效应。在本文中，提出了一种新的、简化且准确的漏极滞后描述，提高了基于物理的紧凑模型 ASM-HEMT 的模拟精度和提取流程。本研究研究了漏极滞后对特定物理现象的影响，重点关注陷阱态、表面电位计算和电子传输特性之间的关系。它辅以修改后的提取程序，最大限度地减少所需的测量，从而减少在同一设备上多次通过的不良后果，使用脉冲 IV 和脉冲小号- 仅参数，以及有效和准确模拟结果的方法。我们表明，所提出的陷阱模型是模拟小信号和大信号行为的决定性工具，可精确预测小号-参数和负载牵引性能。