当前位置: X-MOL 学术IEEE Trans. Power Electr. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Interleaved Planar Packaging Method of Multichip SiC Power Module for Thermal and Electrical Performance Improvement
IEEE Transactions on Power Electronics ( IF 6.7 ) Pub Date : 2021-08-20 , DOI: 10.1109/tpel.2021.3106316
Fengtao Yang 1 , Jia Lixin 1 , Laili Wang 1 , Fan Zhang 1 , Binyu Wang 1 , Cheng Zhao 1 , Jianpeng Wang 1 , Christoph Bayer 2 , Jan Ferreira 3
Affiliation  

Double-sided cooling based on planar packaging method features better thermal performance than traditional single-sided cooling based on wire bonds. However, this method still faces thermal and electrical challenges in multichip SiC power modules. Specifically, one is severe thermal coupling among parallel bare dies, and the other is unbalanced current sharing due to unreasonable layout design. This article aims to explore the potentials of SiC power devices in power module, which are higher current capability and reliability. The proposed packaging method is called interleaved planar packaging and can get rid of the optimizing contradiction between thermal and electrical performance. In this packaging method, there are two functional units: interleaved switch unit and current commutator structure. Benefited from the two units’ electromagnetic and thermal decoupling effects, the interleaved power module features low loop inductance, balanced current, low coupling thermal resistance, and even thermal distributions. A 1200 V 3.25 mΩ half-bridge SiC power module based on interleaved planar packaging is fabricated and tested to verify this method's superiority.

中文翻译:

多芯片碳化硅功率模块的交错平面封装方法,以提高热和电性能

基于平面封装方法的双面冷却比基于线键合的传统单面冷却具有更好的热性能。然而,这种方法在多芯片 SiC 功率模块中仍然面临热和电方面的挑战。具体来说,一是平行裸晶间热耦合严重,二是布局设计不合理导致均流不平衡。本文旨在探索功率模块中 SiC 功率器件的潜力,即更高的电流能力和可靠性。所提出的封装方法称为交错平面封装,可以摆脱热性能和电性能之间的优化矛盾。在这种封装方式中,有两个功能单元:交错式开关单元和电流换向器结构。受益于两个单元的电磁和热解耦效应,交错式电源模块具有低回路电感、平衡电流、低耦合热阻、热分布均匀等特点。制作并测试了基于交错平面封装的 1200 V 3.25 mΩ 半桥 SiC 功率模块,以验证该方法的优越性。
更新日期:2021-10-19
down
wechat
bug