Two terminal devices that exhibit resistance switching in response to an external voltage are interesting for neuromorphic computing applications. Owing to its simple device structure, a crossbar array of two-terminal resistance switching devices is highly desired for application as artificial neural network weights. Here, ferroelectric diodes that show resistance switching in their forward bias are presented. The resistance can be set to a high- and a low-resistance state or any state between these limits. It is demonstrated that the ferroelectric diodes can function as an artificial synapse. An array of the ferroelectric diodes with two bit and two row lines (2 × 2) is demonstrated. The resistance of every bit is independently tuned, and spike-time-dependent plasticity is shown for the array.

中文翻译：

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基于铁电二极管的人工突触纵横阵列

响应于外部电压而表现出电阻切换的两个终端设备对于神经形态计算应用很有趣。由于其简单的器件结构，非常需要两端电阻开关器件的纵横阵列作为人工神经网络权重的应用。在这里，介绍了在正向偏压中显示电阻切换的铁电二极管。电阻可以设置为高电阻和低电阻状态或这些限制之间的任何状态。结果表明，铁电二极管可以用作人工突触。展示了具有两位和两条行线（2×2）的铁电二极管阵列。每个位的电阻都是独立调整的，并且阵列显示了与尖峰时间相关的可塑性。