So far, it has been difficult to fabricate thin-film field-effect transistors (TFTs) based on inorganic halide perovskites (IHPs) due to their phase-instability and uncontrollable trap density. Here, the bottom-gate bottom-contact structured p-type TFTs are presented using the optimized IHP in the active layer. The stable cubic-CsPbI₃ phase is successfully synthesized by doping bismuth iodide and reduced defect densities by adding potassium bromide. The IHP TFTs based on the tailored cubic-CsPbI₃ show high hole mobility of ≈10 cm² V⁻¹ s⁻¹, an on-off current ratio of 10³, and a low subthreshold swing voltage of 0.43 V dec⁻¹. In addition, the operational stability of the fabricated device is demonstrated through the bias stress test. This study suggests that one of the key factors for fabricating an ideal p-type IHP transistor is managing charge transport properties in the IHP layer through defect engineering.

中文翻译：

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具有增强的相位稳定性和界面缺陷容限的高空穴迁移率无机卤化物钙钛矿场效应晶体管

到目前为止，由于无机卤化物钙钛矿（IHPs）的相不稳定性和不可控的陷阱密度，很难制造基于无机卤化物钙钛矿（IHPs）的薄膜场效应晶体管（TFTs）。在这里，使用有源层中优化的 IHP 呈现了底栅底接触结构的 p 型 TFT。通过掺杂碘化铋成功合成了稳定的立方-CsPbI ₃相，并通过添加溴化钾降低了缺陷密度。基于所述定制的立方CsPbI的IHP的TFT ₃示出的高空穴迁移率≈ 10厘米²  V ^-1 小号^-1，通-断的10电流比³，和0.43 V癸低亚阈值摆幅电压^-1. 此外，通过偏置应力测试证明了制造器件的运行稳定性。该研究表明，制造理想 p 型 IHP 晶体管的关键因素之一是通过缺陷工程管理 IHP 层中的电荷传输特性。