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Creation of oxygen vacancies to activate 2D BiVO4 photoanode by photoassisted self‐reduction for enhanced solar‐driven water splitting
Electrochimica Acta ( IF 6.6 ) Pub Date : 2021-10-16 , DOI: 10.1016/j.electacta.2021.139428
Weixin Qiu 1 , Yanfang Zhang 1 , Yang Liu 1 , Xiang Yin 1 , Xuetao Yang 1 , Keke Wang 1 , Long Chen 1 , Qingmei Wang 1 , Wenzhang Li 1, 2 , Jie Li 1
Affiliation  

BiVO4 is regarded as a promising photoanode material because of its narrow band gap (∼ 2.4 eV). However, the poor bulk carrier transport capacity severely limits the actual performance of BiVO4 in photoelectrochemistry (PEC) water splitting. Here, we tried to synthesize two-dimensional (2D) morphology by adding structure-directing agents to hydrothermal solution and introduce oxygen vacancies by photoassisted self-reduction. In the scheme, the 2D morphology can shorten the carrier diffusion length and the construction of oxygen vacancies can increase the bulk carrier concentration. Through the combined effect of both, the inherent poor carrier transport capacity of BiVO4 has been improved, which has been proven by Electrochemical Impedance Spectroscopy (EIS), Intensity Modulated Photocurrent Spectroscopy (IMPS) and Mott-Schottky (M-S) plots. At 1.23 V vs. RHE, the photocurrent density increases from ∼1.60 mA/cm2 (2D BiVO4) to ∼2.30 mA/cm2 [2D BiVO4(Vox)], which is 8 times larger than that of bare BiVO4(0.3 mA/cm2). The incident photon-to-current efficiencies (IPCE) of 2D BiVO4(Vox) have reached the value of 46% (at 350 nm). The carrier separation efficiency (ƞsep) and carrier injection efficiency (ƞinj) have been improved up to 49% and 68%, respectively.



中文翻译:

通过光辅助自还原产生氧空位以激活二维 BiVO4 光阳极以增强太阳能驱动的水分解

BiVO 4因其窄带隙(~2.4 eV)被认为是一种很有前途的光阳极材料。然而,较差的散装载体传输能力严重限制了 BiVO 4在光电化学(PEC)水分解中的实际性能。在这里,我们尝试通过向热液溶液中添加结构导向剂并通过光辅助自还原引入氧空位来合成二维 (2D) 形态。在该方案中,二维形态可以缩短载流子扩散长度,氧空位的构建可以增加体载流子浓度。通过两者的综合作用,BiVO 4固有的载流子传输能力较差已得到改进,这已通过电化学阻抗谱 (EIS)、强度调制光电流谱 (IMPS) 和莫特-肖特基 (MS) 图得到证实。在 1.23 V vs. RHE 下,光电流密度从 ~1.60 mA/cm 2 (2D BiVO 4 ) 增加到 ~2.30 mA/cm 2 [2D BiVO 4 (V ox )],是裸 BiVO 的 8 倍4 (0.3 mA/cm 2 )。2D BiVO 4 (V ox )的入射光子电流效率 (IPCE)已达到 46%(在 350 nm 处)的值。载流子分离效率 ( ƞ sep ) 和载流子注入效率 ( ƞ inj )) 分别提高了 49% 和 68%。

更新日期:2021-10-24
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