Gallium antimonide (GaSb)-based devices operate efficiently in the infrared region. Investigating the toxicity of GaSb thin film is necessary for using embedded GaSb-based devices in living organisms. In this study, viability, oxidative stress, inflammatory responses, apoptosis induction and genotoxicity of GaSb were assayed using L929 cells following a 24 h exposure to GaSb. GaSb thin films were deposited on a quartz substrate using radio frequency (RF) magnetron sputtering. These films were soaked in cell culture medium to prepare test solutions. The viability of cells treated with the GaSb extract was lower than that of control cells. GaSb elicited little reactive oxygen species (ROS) generation. Tumor necrosis factor (TNF)-α and interleukin (IL)-1β levels were elevated in GaSb-treated cell culture supernatants. Apoptosis and genotoxicity were not evident following GaSb treatment. Overall, these results demonstrate the low toxicity of GaSb compared with previous studies examining arsenic-containing III–V materials, which is desirable for biological devices.

中文翻译：

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GaSb薄膜在L929细胞中的细胞毒性和促炎作用

基于锑化镓 (GaSb) 的器件可在红外区域高效运行。研究 GaSb 薄膜的毒性对于在生物体中使用嵌入式 GaSb 基器件是必要的。在这项研究中，在暴露于 GaSb 24 小时后，使用 L929 细胞测定了 GaSb 的活力、氧化应激、炎症反应、细胞凋亡诱导和遗传毒性。使用射频 (RF) 磁控溅射将 GaSb 薄膜沉积在石英衬底上。将这些薄膜浸泡在细胞培养基中以制备测试溶液。用 GaSb 提取物处理的细胞的活力低于对照细胞。GaSb 引起的活性氧 (ROS) 生成很少。肿瘤坏死因子（TNF）-α和白细胞介素 (IL)-1βGaSb 处理的细胞培养上清液中的水平升高。GaSb 处理后细胞凋亡和遗传毒性不明显。总体而言，这些结果表明，与先前研究含砷 III-V 材料的研究相比，GaSb 的毒性较低，这对于生物器件来说是理想的。