Developing high-performance tungsten plasma-facing materials for fusion reactors is an urgent task. In this paper, novel nanochannel structural W films prepared by magnetron sputtering deposition were irradiated using a high-power pulsed electron beam or ion beam to study their edge-localized modes, such as transient thermal shock resistance. Under electron beam irradiation, a 1 μm thick nanochannel W film with 150 watt power showed a higher absorbed power density related cracking threshold (0.28–0.43 GW/m²) than the commercial bulk W (0.16–0.28 GW/m²) at room temperature. With ion beam irradiation with an energy density of 1 J/cm² for different pulses, the bulk W displayed many large cracks with the increase of pulse number, while only micro-crack networks with a width of tens of nanometers were found in the nanochannel W film. For the mechanism of the high resistance of nanochannel W films to transient thermal shock, a residual stress analysis was made by Grazing-incidence X-ray diffraction (GIXRD), and the results showed that the irradiated nanochannel W films had a much lower stress than that of the irradiated bulk W, which indicates that the nanochannel structure can release more stress, due to its special nanochannel structure and ability for the annihilation of irradiation induced defects.

中文翻译：

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高瞬态热抗冲击纳米通道钨膜

开发用于聚变反应堆的高性能钨等离子材料是一项紧迫的任务。在本文中，使用高功率脉冲电子束或离子束照射通过磁控溅射沉积制备的新型纳米通道结构 W 薄膜，以研究其边缘局域模式，例如抗瞬态热震性。在电子束照射下，具有 150 瓦功率的 1 μm 厚纳米通道 W 膜在室温下显示出比商用块状 W（0.16-0.28 GW/m ²）更高的吸收功率密度相关开裂阈值（0.28-0.43 GW/m ²）温度。使用能量密度为 1 J/cm ^{2 的}离子束照射对于不同的脉冲，随着脉冲数的增加，块体W呈现出许多大裂纹，而纳米通道W薄膜中仅发现宽度为数十纳米的微裂纹网络。针对纳米通道 W 薄膜对瞬态热冲击的高耐受机理，通过掠入射 X 射线衍射 (GIXRD) 进行残余应力分析，结果表明辐照后的纳米通道 W 薄膜的应力远低于辐照块体 W 的应力，表明纳米通道结构由于其特殊的纳米通道结构和消除辐照诱导缺陷的能力，可以释放更多的应力。