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La3Ga3Ge2S3O10: An Ultraviolet Nonlinear Optical Oxysulfide Designed by Anion-Directed Band Gap Engineering
Angewandte Chemie International Edition ( IF 16.6 ) Pub Date : 2021-10-08 , DOI: 10.1002/anie.202112692
Hong Yan 1, 2 , Yoshitaka Matsushita 3 , Kazunari Yamaura 1, 2 , Yoshihiro Tsujimoto 1, 2
Affiliation  

Chalcogen anions possess high polarizability leading to strong SHG response, but their high energy levels prevent us from pushing the optical windows into UV regions. The anion-directed band gap engineering associated with O/S anion order yields the novel UV nonlinear optical oxysulfide La3Ga3Ge2S3O10 with an exceptionally large band gap of 4.70 eV. The oxysulfide exhibits phase matching behaviors with SHG intensity twice that of KH2PO4.
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中文翻译:

La3Ga3Ge2S3O10:阴离子导向带隙工程设计的紫外非线性光学氧硫化物

硫属元素阴离子具有高极化率,导致强烈的 SHG 响应,但它们的高能级阻止我们将光学窗口推入 UV 区域。与 O/S 阴离子顺序相关的阴离子导向带隙工程产生了新型紫外非线性光学氧硫化物 La 3 Ga 3 Ge 2 S 3 O 10,其带隙非常大,为 4.70 eV。硫氧化物表现出相匹配行为,SHG 强度是 KH 2 PO 4 的两倍。
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更新日期:2021-12-06
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